| 摘要 |
<p>A method of forming a structure having a contact hole (10) includes the steps of (a) forming an insulating layer (3) on a first conductive layer (2), (b) forming a second conductive layer (4) on the insulating layer, (c) forming an opening (6) in the second conductive layer, (d) forming a conductive sidewall (8) around an inner wall of the first conductive layer defining the opening, (e) selectively etching the insulating layer in a state where the second conductive layer and the conductive sidewall function as etching masks, so that the contact hole having a width smaller than that of the opening and defined by the conductive sidewall is formed, and the first conductive layer is exposed through the contact hole, and (f) removing the second conductive layer and the conductive sidewall by using a photoresist (11). This structure is employed to produce multi-finned stacked storage capacitor DRAMs.</p> |
