| 摘要 |
A solid state imaging device based on free carrier absorption includes a photodiode in which free charges are filled, a transfer electrode which outputs the free charges to a channel region, a transmission electrode by which the free charges stored in the channel region are read out and transferred to outside, and an injection electrode and source region for setting a state in which the photodiode is filled with the free charges as a result of providing the free charges therein. The free charges in a conduction band in accordance with incident light irradiated into the photodiode become in an active state by plasma absorption and then transferred to the channel region under control of the transfer electrode. In addition to the above mentioned composition, a solid state imaging device is made up of two channel region in relation to a picture element of the photodiode. The two channel regions accumurate signal charges activated by the plasma absorption and another-type signal charges having inverse feature against the signal charges.
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