| 摘要 |
PURPOSE:To enable a light emitting diode array to be lessened in reflection loss and improved in external quantum efficiency by a method wherein a protective layer which is multilayered and transparent and whose medium is higher than that of a light emitting region but lower than the atmosphere in refractive index is provided coming into close contact with all P-side electrodes excluding at least a light emitting region and an external connecting terminal section which extend in the direction in which light is taken out from the light emitting region. CONSTITUTION:In a monolithic type light emitting diode array, a single semiconductor chip C is provided with light emitting regions A. A single-layered light transmitting protective layer 14 is provided coming into close contact with all P-side electrodes 7 excluding at least light emitting regions A and an external connecting terminal section 13 which extend in the direction in which light is taken out from the light emitting region A. As the medium of the protective layer 1 is lower than that of the light emitting region but higher than the atmosphere in refractive index, light emitted from the light emitting region A is discharged outside propagating always from the medium of high refractive index to the medium of low refractive index, so that a light emitting diode of this design can be improved in reflection loss, which occurs when light emitted to the atmosphere from the inside of a chip C passes through a refractive index discontinuity interface, and external quantum efficiency. A light emitting diode array can be also protected against mixture and diffusion of impurity from the atmosphere, and a P-side electrode can be protected against oxidation. |
