| 摘要 |
PURPOSE:To shorten a read-only semiconductor memory in turnaround time by a method wherein a metal wiring provided with an opening at least one the gate electrode of a depletion type MISFET is provided. CONSTITUTION:When a metal wiring BL forming metal film is formed, a mem ory manufacturing process is kept on standby until a program is determined, and a metal wiring BL provided with a openings a, b, c, and d is formed by patterning the metal film concerned when the program is decided, and a pro gram can be executed through an ion implantation performed to form a MISFET into a depletion-type using the metal wiring BL as a mask. In this case, as the metal wiring BL provided with the openings a, b, c, and d is formed in a process performed after a read-only memory manufacturing process, processes required for completing the read-only memory after programming are small in number, and a programmed read-only semiconductor memory can be shortened in turnaround time. |
