| 摘要 |
PURPOSE:To avoid a defective conduction caused by corrosion of an aluminum electrode by forming an alumina film on the surface of the aluminum electrode to be exposed on the surface of a semiconductor chip after the wire bonding process. CONSTITUTION:After a wire bonding process, an alumina film 13 is formed on the surface of an aluminum electrode 6a which is exposed on the surface of a semiconductor chip 2 by electrolytic analysis, etc. Coated with the alumina film 13, the aluminum electrode 6a is prevented from corroding as a result of acting upon chlorine or other materials which melt from sodium or sealing resin in water. By this method, a defective conduction is prevented from appearing in a resin-sealed type semiconductor device 2 by corrosion of the aluminum electrode 6a. |
