| 摘要 |
PURPOSE:To prevent or restrain the microstructural change of the title thin film by a method wherein heavy hydrogen substitution body is used as either a hydrogenated matter or hydrogen gas. CONSTITUTION:Firstly, SiH4 is adopted as a material gas and then an amorphous silicon semiconductor thin film is vapor phase deposited meeting the requirements for the substrate temperature at 250 deg.C, gas pressure at 0.05Torr, gas flow rate of 5 sccm, RF power of 2W for about 180 min. When the thin film is left as it is irradiated with the light, the photoconductivity (a) as an important index representing the film characteristics will decline notably. Next, heavy hydrogen silane is substituted for SiH4 to vapor phase-deposit for the formation of the amorphous silicon semiconductor thin film. Within the film so far formed, the initial value of the photoconductivity is increased while the change due to the photoirradiation is noticeably diminished. Likewise, the change in the dark conductivity (b) is also diminished. Accordingly, the amorphous silicon semiconductor thin film having improved characteristics can be manufactured by containing the heavy hydrogen in the deposition atmosphere. |
