发明名称 Non-destructive charge domain multiplier and process thereof
摘要 A non-destructive charge domain multiplier and process thereof wherein the unique characteristics of the charge coupled device permits sensing the size of the charge packet as it moves past an electrode and creating a new charge packet proportional to the product of the original packet and an externally applied value. The device non-destructively senses the size of the charge packet and multiplies it with another value using a multiple metering gate variation of the "Fill and Spill" technique. The present invention therefore constitutes a unique CCD configuration which creates as an output, a charge packet proportional to the product of the charge in an input packet and an externally applied value. Thus, the present invention enables the performance of non-linear operations by CCD integrated circuits.
申请公布号 US5054040(A) 申请公布日期 1991.10.01
申请号 US19900534250 申请日期 1990.06.07
申请人 CALIFORNIA INSTITUTE OF TECHNOLOGY 发明人 YARIV, AMNON;NEUGEBAUER, CHARLES T.;AGRANAT, AHARON J.
分类号 G11C19/28 主分类号 G11C19/28
代理机构 代理人
主权项
地址