发明名称 RESIST SPRAY DEVELOPMENT METHOD
摘要 PURPOSE:To obtain a photo mask with a minimum variability on a plane in simple structure by installing a substrate holding base whose thermal capacity is larger than that of a substrate in a chamber where a specified development temperature is maintained and spraying developer over to a resist, rotating said holding base. CONSTITUTION:An attempt is made to install a substrate holding base 300 into a chamber 1 wherein a specified development temperature is maintained. The substrate holding base 300 is deigned to provide a thermal capacity larger than that of a substrate 4 and a surface area larger than that of the substrate 4. A further attempt is made to rotate the substrate holding base 300 for a specified time so that the temperature of the substrate 4 may become identical to the temperature of development liquid within the chamber 1. A further attempt is made to spray developer 6 over a resist, rotating the substrate holding base 300. This construction makes it possible to equalize the temperature distribution of the resist during development and obtain a photo mask with a minimum variability in simple structure.
申请公布号 JPH03222406(A) 申请公布日期 1991.10.01
申请号 JP19900018485 申请日期 1990.01.29
申请人 HOYA CORP 发明人 YOKOGAWA NAOHIRO
分类号 G03F7/30;H01L21/027;H01L21/30 主分类号 G03F7/30
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