| 摘要 |
PURPOSE:To protect a growth layer against detects and to prevent it from taking in impurity agglomerate so as to obtain an active layer excellent in crystallinity and to improve a light emitting device in light emitting efficiency by a method wherein a melt used for an active layer is formed of In, InP, GaP, and as necessary, InAs and dopant, and a GaAs crystal is introduced before the active layer is made to grow on a GaAs substrate. CONSTITUTION:An AlGaAs semiconductor first clad layer 13 whose forbidden bandwidth is larger than that of an active layer, a GaInAsP or a GaInP compound semiconductor active layer 14, an AlGaAs semiconductor second clad layer 15 whose forbidden bandwidth is larger than that of the active layer, and a GaAs semiconductor cap layer 16 are laminated through an liquid phase epitaxial growth method on a GaAs substrate 12 to constitute a compound semiconductor light emitting element. An active layer growing melt 6b is formed of In, InP and GaP as a source, InAs and dopant, if necessary, and a GaAs crystal 9 is introduced into the melt 6b before an active layer 14 is made to grow on the GaAs substrate 12. The introduction of the crystal 9 is carried out in such a manner that the GaAs crystal piece 9 is housed in a recess 10 located between the underside of a movable lid 4b' and the upside of a carbon boat 2, and the lid 4b' is made to move to introduce the GaAs crystal piece 9 into an active layer melt reservoir 5b. |
