| 摘要 |
PURPOSE:To make the flatness of the whole wafer less than about 1mum and make the flatness of a chip size less than about 0.3 mum by using a polishing fabric with the viscoelasticity characteristic value 0.01X10<-5> -0.5X10<-5>. CONSTITUTION:A disk-shaped mono-crystalline plate (Si wafer) 4 thinly cut from a mono-crystalline Si ingot and having the diameter about 5-12 in is mounted on a polishing fabric 2 fixed on a surface plate 1 and having the viscoelasticity characteristic value 0.01X10<-5> -0.5X10<-5>, and a machining liquid 3 is fed between the polishing fabric 2 and the Si wafer 4 to apply a load 5 to the Si wafer 4. A relative speed 6 is applied between the surface plate 1 and the Si wafer 4, and the Si wafer 4 is flatly machined into a mirror face by the contact between the Si wafer 4 and the silica fine powder in the machin ing liquid 3. |
