| 摘要 |
PURPOSE:To remove the pollution of the surface, and to improve yield and reliability by injecting oxygen ions while using a photo-resist film formed selectively onto a semiconductor substrate as a mask and shaping a field oxide film. CONSTITUTION:A photo-resist layer is formed onto the semiconductor substrate 1, and removed selectively and the pattern 14 is shaped, oxygen ions are injected employing the photo-resist pattern 14 as the mask, the pattern 14 is removed, and the whole is oxidized at a high temperature, thus forming the field oxide film. Accordingly, since Si3N4, etc. are not required, the surface is not polluted, and yield and reliability are improved while the field oxide film and a gate oxide film can be shaped simultaneously. |
