| 摘要 |
<p>PURPOSE:To obtain sufficient modulation by pinching a polycrystalline thin film with insulating layers and impressing an electric field perpendicularly to these thin films. CONSTITUTION:The insulating layers 3 consisting of SiO2, Ta2O5, Sm2O3, Al2O3, Si3N4, etc., are laminated on one side or both sides of the polycrystalline thin film 4 consisting of ZnS or ZnSe. Transparent electrodes 2 and the insulating layers 3 are formed by a sputtering method and the polycrystalline thin film 4 of ZnS0.05Se0.95 is formed by an EB vapor deposition method. The upper and lower transparent electrodes 2 consisting of ITO are patterned to a stripe shape and are intersected orthogonally with each other. The stable impression of the high electric field to the large area is possible in this way.</p> |
