PROCEDE DE FABRICATION D'UN ELEMENT DE MEMOIRE A SEMI-CONDUCTEURS,申请号FR19870003030-传众专利搜索

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发明名称	PROCEDE DE FABRICATION D'UN ELEMENT DE MEMOIRE A SEMI-CONDUCTEURS
摘要
申请公布号	FR2595507(B1)	申请公布日期	1991.09.27
申请号	FR19870003030	申请日期	1987.03.06
申请人	CANON KK	发明人	TAKAO YONEHARA
分类号	H01L27/10;G11C11/403;H01L21/20;H01L21/3205;H01L21/822;H01L21/8229;H01L21/8242;H01L27/04;H01L27/108;(IPC1-7):H01L21/20;H01L29/92;G11C11/34	主分类号	H01L27/10
代理机构		代理人
主权项
地址

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