| 摘要 |
<p>PURPOSE:To enlarge the thickness of a chip capacitor to be placed and to improve moisture resistance by providing a first (pole) bonding connection point at a circuit board placing electrode land and a second (stitch) bonding connection point at the electrode side of the capacitor. CONSTITUTION:In a wire bonding structure of a transfer molding hybrid integrated circuit in which a lead frame having a circuit board 1 for placing electric components including semiconductor, a chip capacitor 2 on a metal island 4 is resin-sealed, a first (pole) bonding connection point 5a is provided at the island 4 side, and a second (stitch) bonding connection point 5b is provided at the electrode 3 side of the capacitor 2. In this case, the height of the capacitor 2 of a bonding gold wire 5 is suppressed to a low value to be advantageous for the upper limit in the thickness of a sealing resin package 8. Thus, the thickness of the capacitor can be increased to improve moisture resistance.</p> |
