| 摘要 |
PURPOSE: To fully fill up a contact hole with a conductive material by a method, wherein the contact hole is provided to an insulating layer, and an aluminum layer is deposited on the surface of a chip at a high temperature of 150 deg.C or so. CONSTITUTION: A contact hole 16 is provided to an insulating layer 14 for exposing a conductive region located below the insulating film 14, a conductive layer 18 which includes a heat-resistant metal is deposited on the insulating layer 14 and inside the contact hole 16, an aluminum layer 20 is deposited at a temperature above 150 deg.C to form an alloy 22 of aluminum and heat- resistant metal inside the contact hole 16. That is, when the aluminum layer 20 is deposited at a high temperature such as above 150 deg.C, the layer 20 is alloyed with the conductive layer 18 to turn into the aluminum/heat-resistant metal alloy layer 22. The volume of the aluminum/heat-resistant metal alloy is larger than those of aluminum and heat-resistant metal, so that a void space in the contact hole 16 is filled up with an expandable alloy. As mentioned above, the contact hole 16 can be completely filled with conductive material. |
