| 摘要 |
PURPOSE:To prevent the leakage and short-circuit between wires in a semiconductor device by forming an intermediate layer of different etching characteristics on a primary insulating layer, forming an electrode wire and dry etching at least surface of the exposed intermediate layer, thereby effectively removing residue on a conductive layer. CONSTITUTION:In a step of wiring, for example, the electrode of an MOSIC, a polysilicon gate 5 and diffused layers 6, 7 are formed, and a primary SiO2 film 8 and an intermediate Si3N4 film 9 are laminated on the overall surface. Then, a resist mask is provided, windows are opened at the films 8, 9 with CF4-H2 series try etchant, the resist is removed, and an Al-Si alloy film 11 is, for example, formed. Subsequently, an electrode wire 11 is formed by a resist mask 12 and CCl4 series dry etchant, is then treated with plasma with CF4-O2 series, and the exposed Si3N4 film 9 is etched and removed with the residue 13 of the alloy film. In this manner, the constituent materials are treated in combination of etching methods of different etching speed, thereby preventing the leakage and the short-circuit between the electrode wires with high reliability without excessive etching of the layers 11 and 8. |
