| 摘要 |
PURPOSE:To improve the adhesion of polyimide film to the underneath layers by a method wherein an Al layer adhesive to a polyimide film is provided in the peripheral part of a semiconductor device while the polyimide layer is constituted to be in contact with the Al layer or covering the same. CONSTITUTION:An EQR part (Al) 4 for stabilizing the high breakdown strength is provided on the surface of a semiconductor substrate 1 and simultaneously an aluminum layer 6 extending over on a scribe lane 7 side is provided and then a CVD oxide film 3 as a surface protective film and a polyimide film 5 are provided on the EQR part 4 and Al layer 6. Resultantly, the polyimide film 5 and the Al layer 6 are brought into contact with each other on the peripheral part 7. Through these procedures, the bond properties of the polyimide film 5 onto the underneath layers in the peripheral part 7 can be improved so that the external factor such as the permeation of water content, etc., may be avoided to heighten the masking effect over the chemical solution cleaning in the next process thereby enhancing the reliability on the semiconductor device. |
