| 摘要 |
PURPOSE:To make resistivity at room temp. small and to prevent a sintered body from being mutually fused by adding BaF2 after calcination in the case of adding an agent for making a semiconductor to the composition of a barium titanate base material contg. Curie point moving substance and roasting the mixture. CONSTITUTION:A barium titanate porcelain semiconductor is produced by adding e.g. 0.09-0.13mol% Sb2O3 and 0.01-0.06mol% Ta2O5 as an agent for making a semiconductor to the composition of barium titanate base material contg. Curie point moving substance and roasting the mixture. In this production, BaF2 is added to barium titanate as one part of a barium source after calcination. Resistivity at room temp. is made small by this method and gaseous fluorine is decomposed at a time of main roasting. A sintered body is avoided from being mutually fused after roasting. Therefore even when a plenty of mixture described above are overlapped and roasted for mass production, the sintered body is easily peeled one by one. |
