| 摘要 |
PURPOSE:To increase the cross-sectional area of a gate electrode as well as to dispense with a region for exclusive use for connecting the gate electrode by a method wherein the overgate part of the gate electrode is formed in such a way that it is extended to the left and right over first and second electrodes. CONSTITUTION:An overgate part 31b of a gate electrode 31 is connected to the upper part of a gate contact part 31a and is extended to the left and right over a common electrode 19 and a drain electrode 20 via an insulating layer 32. Moreover, a contact hole is formed in the layer 32 over the electrode 19 and the overgate part 31b is connected to the electrode 19 via this contact hole. That is, the sectional area of the electrode 31 is increased by forming the overgate part 31b in such a way and at the same time, the connection of the electrode 31 with the source electrode 19 in a D type FET is also made. Thereby, the sectional area of the electrode 31 is increased and at the same time, a region for exclusive use for connecting the electrode 31 becomes unnecessary. |
