| 摘要 |
PURPOSE:To enable the material forming a wiring layer to be controlled not to exercise an unfavorable effect on the characteristics of a conductive region by a method wherein a means to restrain the mutual actions of the wiring layer and the conductive region in the lateral direction on a semiconductor substrate is provided. CONSTITUTION:The title wiring contact structure provided with a semiconductor substrate 1, a conductive region, an insulating layer 2, a wiring layer 61 and a mutual action restraining means is designed so that the wiring layer 61 may be brought into electrical contact with the conductive region formed on the semiconductor substrate 1 through a contact hole 3. The insulating layer 2 formed on the main surface of the semiconductor substrate 1 is provided with the contact hole 3 formed to reach the surface of the conductive region through the hole 3. The wiring layer 61 mainly comprising a high melting point material is formed on the surface of the conductive region and the insulating layer 2. The mutual action restraining means restrains the mutual actions of the wiring layer 61 and the conductive region in the lateral direction on the semiconductor substrate 1. Through these procedures, the high melting point material comprising the wiring layer 61 can be controlled not to exercise an unfavorable effect on the characteristics of the conductive region. |
