| 摘要 |
PURPOSE:To enable the wiring of a semiconductor device excellent in stressmigration resistance as well as electromigration resistance to be made by preliminarily adding Cu to a high melting point metallic silicide film. CONSTITUTION:A silicon oxide film 11 is provided on the surface of silicon substrate 10 whereon a semiconductor element is formed so as to make a contact hole reaching specific part of the semiconductor element. Next, a WSix-Cu alloy film 12 wherein specific amount of Cu is added to WSix is deposited on the whole surface using sputtering process. Next, an Al-Si-Cu alloy film 13 is further deposited by the sputtering process. Through these procedures, the wiring of a semiconductor device in excellent stressmigration resistance as well as electromigration resistance can be made. |
