| 摘要 |
<p>It comprises at least one element including a heterostructure on a substrate (12), this heterostructure comprising two conductive layers (6, 10) and, between the latter, a semiconductor layer (8) forming a potential barrier with each of the conductive layers, excited electrons being formed when the heterostructure is illuminated by luminous radiation whose energy is at least equal to the detection threshold of the heterostructure, this enabling this radiation to be detected by internal photoemission of the electrons from one conductive layer to another. The device further comprises means (18) of variable polarisation of the heterostructure, these means of polarisation making it possible to vary the spectrum, and likewise the threshold, of detection of this device.
<??>Application to the detection of infrared radiation.
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