发明名称 GALLIUM ARSENIC DIODE
摘要 PURPOSE:To suppress occurrence of chip crack due to the package stress by specifying the direction of a scribe line. CONSTITUTION:When an oriental flat 5 is made perpendicular to the crystal direction (010) of a substrate, the scribe line 4 of a gallium arsenic chip 2 having an electrode element points the directions of (010), (001). Through these procedures, the line 4 can make an angle of 45 deg. with the cleavage direction of GaAs thereby enabling the development ratio of chip crack due to the package stress to be decreased.
申请公布号 JPH03218050(A) 申请公布日期 1991.09.25
申请号 JP19900014124 申请日期 1990.01.23
申请人 MATSUSHITA ELECTRIC IND CO LTD 发明人 MOTOYOSHI KANAME
分类号 H01L21/301;H01L21/78;H01L29/47;H01L29/861;H01L29/872;H01L29/93;H01L33/16;H01L33/30 主分类号 H01L21/301
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