RADIATION RESIST, PRODUCTION THEREOF AND PATTERN FORMING METHOD

摘要

PURPOSE:To form a positive type pattern having superior dimensional accuracy by using a polymer or copolymer having a specified unit structure as the base of a radiation resist. CONSTITUTION:A polymer or copolymer having a unit structure represented by the formula (where R is a hydrocarbon group contg. at least one Si atom) is used as the base of a radiation resist. This resist material has high sensitivity, does not form a negative type pattern and also has superior resistance to etching with oxygen plasma because the polymer or copolymer contains a trifluoromethyl group which is liable to cause the decomposition of the principal chain by exposure with electron beams and does not form a negative type pattern by cross-linking at the alpha-position of the acrylic ester skeleton of the unit structure and the Si-contg. hydrocarbon group in the ester moiety.