| 摘要 |
The heterostructure compound semiconductor provides. the improving of dopping effect by reducing the concentration of deep level impurity. The substrate used is tilted with 5 degree from the surface direction of (111)A, (111)B, (211)B, (311)A, (311)B and (110). The n-type impurity of epitaxial layer is at least one of silicon, antimon, germanium, telium, serenium, sulfur.
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