| 摘要 |
PURPOSE:To reduce generation of defect, etc., in a substrate of semiconductor device to be caused by thermal influence by a method wherein a material layer having oxidation speed higher than the substrate is oxidized selectively by the element isolation technique with an insulator to form element isolation films. CONSTITUTION:After a thermal oxide film 2 is made to grow on the P tye single crystal Si substrate 1, the polycrystalline Si layer 3 doped with phosphorus and having higher oxidation speed than the substrate is accumulated thereon, an Si nitride film of 2,000Angstrom thickness is made to grow vapor phase epitaxially, and plural patterns 4 being performed with patterning are formed. After boron ions are implanted therein making the patterns 4 thereof as masks to form P<+> type channel stoppers 5, the polycrystalline Si layer 3 is oxidized selectively making the patterns thereof as oxidation resistive masks to form thick oxide films 6. Accordingly diffusion of phosphorus existing in the polycrystalline Si layer 3' into the substrate is prevented by the thermal oxide film. The the oxide films 6 are made as the element isolation films by the thermal oxidation treatment to complete manufacture of the N channel MOSIC. |
