发明名称 |
Field effect transistor circuit. |
摘要 |
<p>A push-pull circuit having a high load drivability is disclosed. This circuit includes two field effect transistors connected in series, wherein the gate width (Wg1) of one transistor (Q11) for allowing a charge current to a load to flow is caused to be larger than the gate width (Wg2) of the other transistor (012) for allowing a discharge current from the load to flow, thus to increase a charge current at the time of rise of a signal. <IMAGE> <IMAGE></p> |
申请公布号 |
EP0448047(A2) |
申请公布日期 |
1991.09.25 |
申请号 |
EP19910104246 |
申请日期 |
1991.03.19 |
申请人 |
KABUSHIKI KAISHA TOSHIBA |
发明人 |
KATAOKA, SHIGERU, 106, JOYFUL SHINMARUKO DAINI |
分类号 |
H03K19/0952;H03K19/017 |
主分类号 |
H03K19/0952 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|