| 摘要 |
PURPOSE:To obtain a high photoelectric transducing efficiency with a photoelectric transducing element utilizing a metal-semiconductor junction by coating the semiconductor with the oxide of a transition metal or a phthalocyanine coordinated with the chloride of the transition metal. CONSTITUTION:This photoelectric transducing element is formed by coating the entire exposed surfaces of the first and second electrodes 2 and 3 successively formed on a substrate 1 with an organic film 4 and respectively connecting lead wires 6 and 7 to the third electrode 5 attached onto the film 4 and electrode 3. Of the metal-semiconductor junction forming the element, the semiconductor is constituted of the oxide of a transition metal or a phthalocyanine containing naphthalocyanine, porphyrin, etc., and coordinated with the chloride of the transition metal. Oxotitanium phthalocyanine, oxovanadium phthalocyanine, chloroindium phthalocyanine, etc., can be used as the phthalocyanine and a vapor deposition method is used for forming the semiconductor. The thickness of the semiconductor is set at 200-2,000Angstrom and the substrate 1 is heat-treated at 20-300 deg.C under a vacuum condition after the deposition. |
