| 摘要 |
PURPOSE:To form an excellent alignment mark in reading precision, by simultaneously forming an electrode on an exposed semiconductor substrate and the alignment mark on an exposed insulating film. CONSTITUTION:After an ohmic electrode region 17 is opened, a silicon oxide film 12 is etched and eliminated by using a resist pattern 13 as a mask, and the surface of a semiconductor substrate 11 is exposed. A part 16' of the resist pattern which has not yet exposed is exposed and developed, thereby exposing the silicon oxide film 12. Ohmic metal 18 is vapor deposited by using the resist 13 as a mask. The following are simultaneously formed by lift-off method; an ohmic electrode 18-1 on the exposed surface of the substrate 11, and an alignment mark 18-2 on the exposed film 12. After the resist 13 is removed and heat treatment is performed, resist 19 is spread, the mark 18-2 is scanned with an electron beam 101, position alignment is performed, and a gate pattern 102 is formed. Thereby an alignment mark which is free from undercut and excellent in reading precision can be formed. |
