| 摘要 |
<p>The differential cell-type non-volatile semiconductor device having first and second memory cell arrays (MCA1, MCA2). Two cell transistors (MC, MC) of corresponding addresses in the first and second memory cell arrays (MCA1, MCA2) are uses to constitute a single memory cell. Each of writing transistors (WT1, WT2) for wiring data in the cell transistors (MC, MC) is provided to the first and second memory cell arrays (MCA1, MCA2). Complementary data are written in the two cell transistors (MC, MC) selected in the first and second memory cell arrays (MCA1, MCA2). Readout potentials from the two cell transistors (MC, MC) are amplified by a differential amplifier (DFA), thereby reading out stored data. The memory device has a stress test control circuit (10, 21) for controlling, in a stress test mode, writing transistors (WT1, WT2) such that they are all simultaneously turned on/off. <IMAGE></p> |
