发明名称 INTEGRATED CIRCUIT WITH AN ELECTROCONDUCTIVE FLAT ELEMENT
摘要 An integrated semiconductor circuit includes a substrate; a layer of electrical structures disposed in the substrate; conductor runs connected to the electrical structures; at least one electrically conducting surface element covering part of the electrical structures, part of the substrate and part of the conductor runs defining first conductor runs covered by the at least one surface element and second conductor runs; an insulating layer electrically separating the at least one surface element from first the conductor runs; and a passivating layer covering the substrate, the electrical structures, the conductor runs and the at least one surface element; the at least one surface element having at least the same thickness and the same chemical properties as the conductor runs; and the passivating layer being at least as thick above the at least one surface element covering the first conductor runs as above the second conductor runs.
申请公布号 EP0221351(B1) 申请公布日期 1991.09.25
申请号 EP19860113573 申请日期 1986.10.02
申请人 SIEMENS AKTIENGESELLSCHAFT 发明人 SCHRENK, HARTMUT, DR.
分类号 H01L21/822;G06F21/06;G06K19/073;G06K19/077;H01L21/3205;H01L21/8247;H01L23/52;H01L23/58;H01L27/04;H01L29/788;H01L29/792 主分类号 H01L21/822
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