发明名称 PROTECT OF SEMICONDUCTOR DEVICE
摘要 The protector protects from the electrostatic charge formed around the input pad (4) of the semiconductor device. Because the charge collecting region (2) absorbing the charge delays the input signal, a resistance layer (R5) is formed on an input passway region (3) connected to the input pad so that the electrostatic charge is absorbed by the region (2) and the input signal is transmitted through a resistance layers (R3,R5). Then the input delay is improved without decreasing the charge collection.
申请公布号 KR910007374(B1) 申请公布日期 1991.09.25
申请号 KR19880008604 申请日期 1988.07.11
申请人 SAM SUNG ELECTRONICS CO.,LTD. 发明人 KIM CHANG-HYON;CHANG HYON-SUN
分类号 H01L27/04;H01L21/822;H01L27/02;H02H7/20;H03F1/52;(IPC1-7):H01L27/04 主分类号 H01L27/04
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