| 摘要 |
PURPOSE:To improve the X-ray transmittance of an X-ray transmitting part to a large extent and to obtain an X-ray mask by which the X rays having the longer wavelength than a conventional device can be used for exposure by removing a supporting film at parts where the absorbing body of the X-ray mask are not mounted, and forming holes in the supporting film. CONSTITUTION:A supporting film 6 is applied on a hole part 5a of a mask substrate 5. Patterns 7 formed of an X-ray absorbing body are mounted on the supporting film 6. In this X-ray mask, the supporting film 6 at parts where the patterns 7 formed of the X-ray absorbing body are not mounted is removed. Thus, holes 8 are formed in the supporting film 6. For example, silicon nitride films are deposited on both surfaces of the mask substrate 5 made of silicon. Thereafter, a tantalum film is formed on the surface, and an SiO2 film is further formed thereon. Then, the SiO2 film selectively undergoes dry etching based on a resist pattern on which electron beam lithography is performed. Then, with the obtained SiO2 pattern as a masking material, a tantalum patterns are formed as the absorbing body patterns 7. Thereafter, the silicon nitride of the supporting film 6 undergoes dry etching with the tantalum patterns 7 as a masking material. |
