| 摘要 |
PURPOSE:To obtain the titled device by restraining the magnetostriction of a metallic ring by a method wherein the metallic ring is composed of a magnetic resultance material, when a semiconductor junction element is clamped by means of posts made of electric conductor, and these are surrounded by a ring-like insulator via metallic ring installed to each. CONSTITUTION:The semiconductor junction element 2 is clamped by means of a pair of posts 3a and 3b composed of electric conductor, which are then surrounded by the ring-like insulator 8 composed of ceramic member. Next, the brazed part M1 of the side surfaces of the posts 3a and 3b is coupled to the brazed part M3 of the step part 8S provided to the insulator 8 by means of thin metallic plates 9a and 9b which elastically deform. In this constitution, the metallic plates 9a and 9b are made of magnetic reluctance material the alloy material of Ni and Cu, so as to avoid the induction of alternating filed in the metallic rings 9a and 9b even when a high frequency large current flows to this semiconductor device 7, resulting in the generation of a large alternating field in the periphery. Therefore, the device having no noise by magnetostriction can be obtained. |
