发明名称 |
Epitaxial intermetallic contact for compound for compound semiconductors |
摘要 |
A class of intermetallic compound contact materials for III-V semiconductors is obtained by depositing successively and concurrently a thin film of a transition metal and a Group III metal upon the semiconductor and annealing the resultant structure, so resulting in the formation of a monocrystalline intermetallic contact. The contacts are stable at temperatures ranging from 600-900 DEG C. and may be fabricated by conventional vacuum deposition.
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申请公布号 |
US5051792(A) |
申请公布日期 |
1991.09.24 |
申请号 |
US19900537681 |
申请日期 |
1990.06.14 |
申请人 |
BELL COMMUNICATIONS RESEARCH, INC. |
发明人 |
SANDS, TIMOTHY D. |
分类号 |
H01L21/285 |
主分类号 |
H01L21/285 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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