| 摘要 |
<p>PURPOSE:To enable the characteristic of an element to be measured to be measured even after a chip is molded by controlling the current of a load element from the outside of the chip of an integrated circuit, detecting the potential of the connecting part of the element to be measured with the load element, and taking it out to the outside of the chip. CONSTITUTION:When a control voltage is applied from the outside of the chip to a control voltage input pad 11, the on-resistance of a transistor TR P1 for load element is controlled. Assuming that an EE-PROM element 1 that is the element to be measured is set at a write state, the potential of the connecting point A of both elements goes to an L(H) level if the on-resistance of the element 1 is lower (higher) than that of the TR P1 for load element, and the output of an inverter IV goes to the H (L) level. When the on-resistance of the TR P1 is controlled with the control voltage to be applied to the pad 11, and also, the current that flows on the outside of the chip is monitored corresponding to the output of the inverter IV, the input of the control voltage when the output of the inverter IV is changed and a monitor output current can be measured. In such a way, it is possible to indirectly measure the write quantity of the element 1.</p> |
