摘要 |
PURPOSE:To complete fine correction once by positioning a pattern to be corrected while identifying the pattern with one electron microscope and switching the beam for exposure and exposing it. CONSTITUTION:Unnecessary pattern position is confirmed in advance for a photomask, a resist mask is coated, and is mounted on a base 7 in a sample chamber 6. The microscope is then evaculated, and an electron beam addcelerating voltage is set for observation by an acceleration controller 5. The photomask is confirmed through a window 4, the base 7 is moved to position the part to be corrected. Slit plates 2, 3 are controlled to form a rectangular beam, and the controller 5 is switched for exposure. Then, it is developed to remove unnecessary pattern. The defect of the pattern may be similarly corrected with the lift-off resist. According to this structure, the work can be simple and fine repair can be completed once. |