| 摘要 |
PURPOSE:To obtain a semiconductor laser whose oscillation threshold current is small by a method wherein a groove whose width and depth are the mean free path or lower of the electron is formed, an insulator layer of several tens of angstroms is laminated on parts other than side faces of the groove and, after that, is grown selectively and the groove is filled. CONSTITUTION:An insulator layer 12 of several tens of angstroms is formed on parts other than side faces of a groove; a second semiconductor 13 whose forbidden-band energy is smaller than that of a semiconductor 11 constituting the side faces of the groove is filled into the groove. In addition, a third semiconductor 14 whose forbidden- band energy is larger than that of the second semiconductor 13 and whose conductivity type is different from a first conductivity type is laminated on the groove. Consequently, when an electric current flows between the first semiconductor 11 and the third semiconductor 14, electrons and holes flow effectively into the quantum wire layer 13, and the current injection efficiency is increased remarkably. In addition, the size of the quantum wire layer 13 is controlled when it is filled. As a result, it is possible to restrain an irregularity in a quantum confinement effect by the fluctuation of a shape. Thereby, it is possible to obtain a semiconductor laser whose oscillation threshold current is small. |
