| 摘要 |
PURPOSE:To enable the title high-frequency element capable of high-frequency, high output oscillation and amplification to be manufactured by a method wherein the semiconductor layers to be operation layers are specified to be semiconductor diamond layers. CONSTITUTION:The semiconductor layers 2-5 to be operation layers are specified to be semiconductor diamond layers. Due to the large band gap of 5.5eV in the diamond, the temperature region corresponding to the intrinsic region do not exist at 1400 deg.C and below where the diamond is thermally stabilized. Accordingly, even if the temperature is raised, the carriers in the low doped layer are not increased by the thermal excitation of the carriers so that the charge avalanche due to a backward bias may be caused even at high temperature. That is, the microwaves can be oscillated and amplified even at high temperature. Through these procedures, both high frequency oscillation characteristics and high output characteristics can be enhanced. |
