SID-WALL DOPED TRENCH COPACITOR CELL USING SELF-ALIGNED CONTACT AND A METHOD MANUFACTURING THEREOF

摘要

A dynamic RAM with side wall doped trench capacitor cell comprises: trench capacitor formed in silicon substrate, locomotion gate formed at silicon surface adjacent to the trench, drain N+ region connected with charge storage electrode of trench capacitor, source N+ region connected with conducting layer of bit line. The polysilicon layer for interconnection line is used to connect the drain N+ region with the charge storage electrode and to overlap with the first insulating layer deposited at upper side of gate electrode. The bit line is connected at center part of polysilicon layer for interconnection line.