SIDE-WALL DOPED TRENCH AND STACKED CAPACITOR CELL AND METHOD MANUFACTURING THEREOF

摘要

A dynamic RAM with side wall doped trench and stacked capacitor structure includes a trench capacitor formed in p-type silicon substrate, drain of locomotion gate connected with the charge storage electrode of trench capacitor, source of locomotion gate connected with the bit line. The P+ diffused region for the first capatcitor outer electrode is formed at inner side wall of trench. The charge storage electrode is connected with the drain of locomotion gate by deposition the capacitor first dielectric film, charge storage electrode, the capacitor second dielectric film in sequence all over the outer side wall of trench.