| 摘要 |
The present invention provides a Schottky Junction CCD array comprising a plurality of adjacent Schottky Junction CCDs which are infra-red sensitive, and which are separated by a low dose impurity implant (31) of the same polarity as a higher dose implant (35, 36) within the CCD channel (32). The individual gates are comprised of a metal silicide layer on the semiconductor substrate. The silicide layer stretches all the way across the array. Also, these silicide strips are separated by gaps (34) of sub-micron dimensions. This construction leads to substantially a 100 % fill factor for the array. Nearly all of the array will be IR sensitive. |
