| 摘要 |
A semiconductor chip gyroscopic transducer (10) is disclosed in which a semiconductor element (47) is supported in an outer element by a flexible linkage system which is in turn supported in a frame of semiconductor material (16) by another flexible linkage system which permits the element to vibrate about two axes relative to the frame. Balanced torque forces are provided by a system of buried (50, 52, 54, 56) and bridge (58, 60, 62, 64) electrodes. The stress and tension resulting from doping of these elements are released by a flexure beam (20, 22, 36, 38). The inertial mass of the inner element is balanced by formation in a central pit and on-chip electronics avoids the capacitive loading effects of long runs from high impedance sources. Flexure footings are integrated with the structure adding stability to flexures connecting the supported gyroscopic resonator element to the supporting structure, offsetting a rippling effect inherent in the oxide structure. Flexure grooves provide selective stiffness in the flexure. The bridge electrodes (58, 60, 62, 64) are additionally electrically isolated for electrical compatibility with gyroscope electronics. |
