Method of manufacture of semiconductor devices.

摘要

A method of manufacture of semiconductor devices wherein a radiation beam is projected from a synchrotron orbit radiation source into an ambience maintained substantially at a vacuum, wherein a first beam which is a portion of the radiation beam is directed to a wafer through a window effective to isolate the ambience to thereby print a circuit pattern on an X-ray sensitive layer on the wafer with the first beam, wherein an opening is formed at least in a portion of a support for supporting the window, wherein a second beam which is another portion of the radiation beam is extracted through the opening, and wherein, by using the second beam, any deviation of the first beam with respect to the wafer is detected and corrected. <IMAGE>