| 摘要 |
<p>A photonic device includes a substrate and a region comprised of a quaternary Group II-VI material supported by the substrate. Examples of quaternary Group II-VI alloys include Hg, Zn, S and Se; Hg, Zn, Se and Te; Zn, S, Se and Te; Zn, Mn, S and Se; and Hg, Cd, Zn and S. By example, the quaternary material HgZnSSe, which is lattice-matched to ZnSe or GaAs, and the quaternary material HgZnSeTe, which is lattice-matched to ZnTe or GaSb, are employed in the construction of lasers, LEDs and detectors suitable for use over a range of wavelengths. The energy bandgap of the HgZnSSe alloy may be varied to achieve emission over the entire visible spectrum while the HgZnSeTe alloy emits within the spectrum from green to far infrared. <IMAGE></p> |
