Method of manufacturing semiconductor device.

摘要

Disclosed is a method of manufacturing a semiconductor device, which comprises the steps of forming a solid phase diffusion source (3) containing a conductive impurity on a surface of a semiconductor substrate (1), said impurity serving to enable said semiconductor substrate (1) to exhibit a p-type or n-type conductivity, allowing said solid phase diffusion source (3) to contain a diffusion control substance serving to reduce or oxidize said conductive impurity upon heating so as to change the diffusion coefficient of the conductive impurity contained in the solid phase diffusion source (3), and thermally diffusing the conductive impurity from the solid phase diffusion source (3) into the semiconductor substrate (1). <IMAGE> <IMAGE>