MOSFET DEVICE AND ITS MANUFACTURING METHOD

摘要

The MOSFET omits the etching process which is for removing the metal layer selectivcely and gets and stable silicide structure. The metal oxide layer is used for the etch end point and the etching boundary layer to contact the bit line to the source and drain regions when etching the NSG and BPSG layers so that the self-aligned contact structure is obatined.