Thyristor having adjustable breakover voltage and method of manufacture

摘要

A thyristor with an npnp layer sequence in which the p-emitter (4) comprises a sub-region (15) in the lateral region of an ignition contact (8) or of a light-sensitive zone (17a), this sub-region (15) being provided with a higher doping concentration that the remaining part of the p-emitter (4). A controllable over voltage ignition of the thyristor occurs at an adjustable, reduced breakover voltage, such breakover voltage being established by selectively irradiating a zone of the thyristor to reduce the breakover voltage point.