| 摘要 |
<p>PURPOSE:To perform a photodetector which does not need color filters by bonding substances having different energy gaps sequentially of smaller gaps in a multihetero junction. CONSTITUTION:A semiconductor photodetector 21 is formed in a structure in which substances 11-15 having energy gaps Eq(1)-Eq(5) are sequentially formed continuously on a substrate 10. Thus, since electrons of only a thin film layer having smaller energy gap than the energy corresponding to the wavelength lambdaof an incident light are excited from a valence band to a conduction band, the wavelength of the light can be detected by monitoring the electric conductions of the layers 11-15. Since a semiconductor image sensor 22 can detected the wavelength lambda of the light of each section, it can be used as an image sensor merely by forming the structures 11-15, and a mechanical error such as a bonding error of a color filter to a CCD solid state image sensor can be eliminated. Thus, the photodetector which does not need a color filter is obtained.</p> |
