| 摘要 |
<p>PURPOSE:To prevent the short-circuiting caused by dust and the like during measurement, enable the inspection of failures caused by passivation, and reduce the operating speed difference between a semiconductor device and a circuit, by installing a through hole connecting an electrode for inspection use on a pasivation film and a wiring. CONSTITUTION:A silicon oxide film 102 is formed as an layer insulating film on a silicon substrate 101, and a wiring 103 is formed on the film 102 by using aluminum. After a silicon nitride film is formed as a passivation film 104 on the whole surface, a through hole 106 is formed on the wiring, and an electrode 105 for inspection use is formed in the upper part of the through hole 106 by using aluminum. Thereby the failures caused by dust which has fallen down during measurement because said measurement is performed after the passivation film is formed, and the short caused by hillock of aluminum after sintering can be prevented, and further the inspection of failures owing to stress caused by passivation is enabled. In addition, since the capacitance between the wiring 103 and the silicon substrate 101 is reduced, the operating speed difference between practical semiconductor and a circuit is reduced.</p> |
